Radiation-emitting semiconductor device

ABSTRACT

A radiation-emitting semiconductor device includes a housing body having a chip mounting area, a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations, the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged, the chip mounting area is a surface of the housing body which abuts the cavity, and the chip mounting area is free of the light-absorbing material in selected locations remote from the chip connection region.

RELATED APPLICATIONS

This is a continuation of U.S. Ser. No. 13/636,048, filed Sep. 19, 2012,which is a § 371 of International Application No. PCT/EP2011/053103,with an international filing date of Mar. 2, 2011, which is based onGerman Patent Application No. 10 2010 012 602.0, filed Mar. 24, 2010,the subject matter of which is incorporated by reference.

TECHNICAL FIELD

This disclosure relates to a radiation-emitting semiconductor device anddisplay apparatus, particularly a radiation-emitting semiconductordevice having particularly diverse uses.

SUMMARY

I provide a radiation-emitting semiconductor device including a chipconnection region, a radiation-emitting semiconductor chip, and alight-absorbing material, wherein the radiation-emitting semiconductorchip is fixed to the chip connection region, the chip connection regionis covered with the light-absorbing material at selected locations atwhich the chip connection region is not covered by theradiation-emitting semiconductor chip, and the radiation-emittingsemiconductor chip is free of the light-absorbing material in locations.

I also provide display apparatus comprising at least one pixel formed atleast partly by a radiation-emitting semiconductor device.

I further provide a radiation-emitting semiconductor device including achip connection region, a radiation-emitting semiconductor chip, ahousing body having a chip mounting area, and a light-absorbingmaterial, wherein the radiation-emitting semiconductor chip is fixed tothe chip connection region, the chip connection region is covered withthe light-absorbing material at locations at which the chip connectionregion is not covered by the radiation-emitting semiconductor chip, theradiation-emitting semiconductor chip is free of the light-absorbingmaterial in selected locations, the chip connection region and/or a wireconnection region are arranged at the chip mounting area, the chipmounting area is free of the light-absorbing material in selectedlocations, and the chip mounting area is formed with the same color as,or in a similar color to, the light absorbing material.

I further yet provide a radiation-emitting semiconductor deviceincluding a housing body having a chip mounting area, a chip connectionregion, a radiation-emitting semiconductor chip, and a light-absorbingmaterial, wherein the radiation-emitting semiconductor chip is fixed tothe chip connection region, the chip connection region is covered withthe light-absorbing material at selected locations at which the chipconnection region is not covered by the radiation-emitting semiconductorchip, the radiation-emitting semiconductor chip is free of thelight-absorbing material in selected locations, the housing body has acavity in which the at least one radiation-emitting semiconductor chipis arranged, the chip mounting area is a surface of the housing bodywhich abuts the cavity, and the chip mounting area is free of thelight-absorbing material in selected locations which are remote from thechip connection region.

I also further provide a method of producing the device including ahousing body having a chip mounting area, a chip connection region, aradiation-emitting semiconductor chip, and a light-absorbing material,wherein the radiation-emitting semiconductor chip is fixed to the chipconnection region, the chip connection region is covered with thelight-absorbing material at selected locations at which the chipconnection region is not covered by the radiation-emitting semiconductorchip, the radiation-emitting semiconductor chip is free of thelight-absorbing material in selected locations, the housing body has acavity in which the at least one radiation-emitting semiconductor chipis arranged, the chip mounting area is a surface of the housing bodywhich abuts the cavity, and the chip mounting area is free of thelight-absorbing material in selected locations which are remote from thechip connection region, including applying the light-absorbing materialby a jet process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B show schematic views of a radiation-emittingsemiconductor device without a light-absorbing material.

FIGS. 2, 3A, 3B, 3C, 4A, 4B, 4C, 5, 6 and 7 show schematic illustrationsof examples of a radiation-emitting semiconductor device.

DETAILED DESCRIPTION

The semiconductor device may comprise a chip connection region. The chipconnection region is a region provided for mounting at least oneradiation-emitting semiconductor chip on the chip connection region. Byway of example, the chip connection region is formed by metallization orwith a metal body. In particular, the chip connection region has ahigher reflectivity for visible light than regions of theradiation-emitting semiconductor device which surround it.

The radiation-emitting semiconductor device may comprise aradiation-emitting semiconductor chip. The radiation-emittingsemiconductor chip is a semiconductor chip which emits electromagneticradiation in the wavelength range between infrared radiation and UVradiation during operation. By way of example, the radiation-emittingsemiconductor chip emits visible light during operation. Theradiation-emitting semiconductor chip is a luminescence diode chip, forexample, that is to say a laser diode chip or a light-emitting diodechip.

The radiation-emitting semiconductor device may comprise alight-absorbing material. The light-absorbing material is provided toabsorb at least part of the electromagnetic radiation in the visiblerange that impinges on the light-absorbing material. For example, atmost 25% of the light in the visible range that impinges on the outerarea of the light-absorbing material is reflected or re-emitted.Preferably at most 15%, particularly preferably at most 5%, of theimpinging light in the visible range is reflected. By way of example,the light-absorbing material is black.

The radiation-emitting semiconductor chip may be fixed to the chipconnection region. In this case, the radiation-emitting semiconductorchip can also be electrically contact-connected at the chip connectionregion. Furthermore, it is possible for a plurality ofradiation-emitting semiconductor chips to be fixed on a chip connectionregion. The base area of the chip connection region is preferably chosensuch that the radiation-emitting semiconductor chip or theradiation-emitting semiconductor chips in total have a cross-sectionalarea smaller than the base area such that the radiation-emittingsemiconductor chip or chips does or do not completely cover the chipconnection region. This proves to be advantageous, in particular, since,in this way, the radiation-emitting semiconductor chip can be positionedon the chip connection region with a certain tolerance.

The chip connection region may be covered with the light-absorbingmaterial at locations at which it is not covered by theradiation-emitting semiconductor chip. That is to say that regions ofthe chip connection region which would be exposed because theradiation-emitting semiconductor chip does not cover them are partly orcompletely covered with the light-absorbing material.

The radiation-emitting semiconductor chip may be free of thelight-absorbing material in selected locations. That is to say that theradiation-emitting semiconductor chip is not completely covered by thelight-absorbing material rather, for example, at least that surface ofthe radiation-emitting semiconductor chip which is remote from the chipconnection region remains completely or partly free of thelight-absorbing material. By way of example, the light-absorbingmaterial, at side areas of the radiation-emitting semiconductor chip,can directly adjoin the latter.

The radiation-emitting semiconductor device may comprise a chipconnection region, a radiation-emitting semiconductor chip fixed to thechip connection region, and a light-absorbing material which covers thechip connection region at locations at which it is not covered by theradiation-emitting semiconductor chip, wherein the radiation-emittingsemiconductor chip is free of the light-absorbing material in locations.

In particular, it is possible that the light-absorbing material isapplied to the chip connection region after the chip has been fixed tothe chip connection region. For example, a side surface of the chip canbe covered with the light-absorbing material.

The radiation-emitting semiconductor device may comprise a wireconnection region. The wire connection region is formed by metallizationor with a metal body, for example. In particular, the wire connectionregion differs from the material surrounding it by virtue of its higherreflectivity for visible light.

The radiation-emitting semiconductor device may comprise a wire whichelectrically conductively connects the wire connection region to theradiation-emitting semiconductor chip. By way of example, theradiation-emitting semiconductor chip is then electrically conductivelycontact-connected first via the chip connection region and second viathe wire.

The wire connection region may be covered with the light-absorbingmaterial at locations at which it is not covered by the wire. That is tosay that, for example, light-reflecting regions of the wire connectionregion which, without the light-absorbing material, would be freelyaccessible and light-reflecting are covered with the light-absorbingmaterial. In this case, it is possible for parts of the wire also to becovered with the light-absorbing material. In an extreme case, theentire wire can be covered with the light-absorbing material.

The radiation-emitting semiconductor device may comprise a single chipconnection region, a single radiation-emitting semiconductor chip and asingle wire connection region. The radiation-emitting semiconductor chipcan then be a radiation-emitting semiconductor chip which emits, forexample, infrared radiation, colored visible light or white light.

The radiation-emitting semiconductor device may comprise two chipconnection regions, a single radiation-emitting semiconductor chip andno wire connection region. The radiation-emitting semiconductor chip canthen be a radiation-emitting semiconductor chip which emits, forexample, infrared radiation, colored visible light or white light.

The radiation-emitting semiconductor device may comprise at least tworadiation-emitting semiconductor chips. By way of example, theradiation-emitting semiconductor device can then be a semiconductordevice which comprises a semiconductor chip which emits red light, asemiconductor chip which emits blue light and a semiconductor chip whichemits green light. Each of the semiconductor chips can be electricallycontact-connected by, respectively, two chip connection regions or,respectively, two wire connection regions or by, respectively, one chipconnection region and one wire connection region.

Independently of how many chip connection regions, radiation-emittingsemiconductor chips and wire connection regions the radiation-emittingsemiconductor device comprises, the wire connection regions and chipconnection regions present are covered with the light-absorbing materialat locations at which they are not covered by other components of thesemiconductor device. In this case, the light-absorbing material can beapplied in a targeted manner where it covers a connection region.Furthermore, it is possible for the light-absorbing material to beapplied areally such that it is present, for example, as a singlecontinuous body, covering all exposed locations of the connectionregions, in the radiation-emitting semiconductor device.

The radiation-emitting semiconductor device may comprise a housing bodyhaving a chip mounting area. By way of example, the housing body canhave a cavity in which the at least one radiation-emitting semiconductorchip is arranged. The chip mounting area of the housing body is thenformed by the chip mounting area of the cavity. However, it is alsopossible for the housing body to be a parallelepipedal plate that isfree of cutouts or cavities in which radiation-emitting semiconductorchips are arranged. In an extreme case, the housing body can be aprinted circuit board wherein the chip mounting area of the housing bodyis arranged at the side at which the radiation-emitting semiconductorchip is also mounted.

In this case, the chip connection region and/or the wire connectionregion are arranged at the chip mounting area of the housing body. Thechip mounting area is thus free of light-absorbing material in selectedlocations. In other words, the entire chip mounting area may not becovered with the light-absorbing material, rather the light-absorbingmaterial is arranged, for example, only at those locations at which anincreased reflection of light occurs such as in the chip connectionregion and/or in the wire connection region. In this way, relativelylittle light-absorbing material is required.

By way of example, the metal or the metals forming the chip connectionregion and the wire connection region is or are covered with thelight-absorbing material. The rest of the chip mounting area is thenfree of the light-absorbing material. For example, at least 50% of thechip mounting area is free of the light-absorbing material. In thiscase, it is possible, in particular, for the chip mounting area have thesame color as, or in a similar color to, the light-absorbing material.In this case, the entire housing body can also have the same color as,or a similar color to, the light-absorbing material. In a view of thesemiconductor device, the semiconductor device, apart from the radiationexit areas of the semiconductor chips, then appears in uniform color.There are no disturbing reflections, for example, as a result ofmetallizations at the chip mounting area which can disturb the contrastwith respect to the semiconductor chips.

The chip mounting area may be completely covered by the light-absorbingmaterial. That is to say, in particular, the light absorbing material isalso situated on regions of the chip mounting area which are at adistance from the chip connection region and/or from the wire connectionregion. In this case, application of the light-absorbing material isparticularly simple since the light-absorbing material does not have tobe deposited in a targeted manner in the region of the connectionregions.

The radiation-emitting semiconductor device may comprise alight-transmissive potting material. The light-transmissive pottingmaterial is substantially free of the light-absorbing material. In thiscase, the light-absorbing potting material can be transparent.Furthermore, it is possible for the light-transmissive potting materialto be filled with a phosphor and/or with a diffuser. The phosphor canbe, for example, particles of a luminescence conversion material which,for example, absorbs blue light or UV radiation and re-emits radiationhaving higher wavelengths. The diffuser material can be, for example,particles of, in particular, a ceramic material which are suitable forscattering light.

The fact that the potting material is substantially free of thelight-absorbing material means that the light-absorbing material or thelight-absorbing constituent of the light-absorbing material such aslight-absorbing particles, for example, is not introduced into thepotting material in a targeted manner. As a result of diffusionprocesses at the interface between potting material and light-absorbingmaterial, however, it can happen that small portions of thelight-absorbing material diffuse into the light-transmissive pottingmaterial. Preferably, the proportion by weight, for example, ofradiation-absorbing particles of the light-absorbing material in thelight-transmissive potting material is at most 1%.

In this case, the potting material is arranged in the radiation-emittingsemiconductor device such that it adjoins the light-absorbing materialin locations. That is to say that the light-transmissive pottingmaterial completely covers the exposed outer areas of thelight-absorbing material, for example, and thus encapsulates thelight-absorbing material towards the outside.

The housing body and the light-absorbing material may be in the samecolor. By way of example, both the housing body and the light-absorbingmaterial may be black.

The chip connection region and/or the wire connection region may beformed with a metal such as silver, for example. In this case, theconnection regions can be formed by metallization. Metallization isapplied to a material of the housing body, for example. For thispurpose, the housing body can be formed with a plastic material and/orwith a ceramic material. However, it is also possible for themetallization to be applied to a metallic leadframe, which is formedwith copper, for example. Furthermore, it is possible for the connectionregions to be parts of such an electrical leadframe which are notprovided with additional metallization.

The light-absorbing material may inhibit migration of the metal, that isto say, for example, of the silver, of the connection regions. For thispurpose, for example, light-absorbing particles of the light-absorbingmaterial can inhibit migration in particular in the electric field of,for example, ions of the metal or of the silver by the particles.Furthermore, it is possible for the light-absorbing material to comprisefurther fillers which inhibit the migration in the electric field. Thefillers can be, for example, particles of a ceramic material orparticles composed of titanium dioxide.

Particularly if the chip connection region and/or the wire connectionregion are/is formed with a metal such as silver, a further advantagethat arises is that possible oxidation or corrosion of the metal of theconnection regions or of the connection region, after the exposedlocations of the connection regions have been covered by thelight-absorbing material, is externally no longer discernable or ispreventable. That is to say that it is also possible for thelight-absorbing material to inhibit, delay or prevent oxidation and/orcorrosion of the metal of the connection regions or of the connectionregion.

The light-absorbing material may be applied by a jet process.Furthermore, it is possible for the light-absorbing material to beapplied by a molding process, by selective deposition (for example, by aplasma spraying process), by screen printing, by sputtering or byspraying. In this case, the individual application processes aredistinguishable from one another on the finished product. Therefore,these application processes for the light-absorbing material aresubstantive features which can be demonstrated on the finishedradiation-emitting semiconductor device.

The light-absorbing material may comprise a silicone into whichlight-absorbing particles are introduced. The light-absorbing particlescan be carbon black particles, for example. The carbon black ispreferably amorphous carbon black. The proportion of the absorber (forexample, the carbon black particles) in the matrix material (forexample, the silicone) of the radiation-emitting semiconductor device ispreferably between at least 7% by weight and at most 13% by weight, forexample, 10% by weight.

For a viscous material such as silicone, for example, a jet processconstitutes a particularly suitable method of applying thelight-absorbing material.

The radiation-emitting semiconductor device is particularly well suitedto use in so-called “video walls” wherein individual pixels are formedby radiation-emitting semiconductor chips of the radiation-emittingsemiconductor device. The radiation-emitting semiconductor device isdistinguished by the high contrast between switched-on and switched-offstates of the radiation-emitting semiconductor device. By virtue of thecovering of the bright regions in the radiation-emitting semiconductordevice such as the connection regions, for example, with thelight-absorbing material, a radiation-emitting semiconductor devicearises which, in the switched-off state, appears fully black, forexample, in plan view. By virtue of the fact that the radiation-emittingsemiconductor chip remains free of the light-absorbing material inlocations, it is possible to achieve a high brightness of the lightemitted by the radiation-emitting semiconductor device or of theelectromagnetic radiation emitted by the radiation-emittingsemiconductor device.

Furthermore, a display apparatus is specified, wherein pixels of thedisplay apparatus are formed by the radiation-emitting semiconductordevices. The display apparatus is, for example, a large-area video wallhaving a display area of at least 5 m².

The radiation-emitting semiconductor device will be explained in greaterdetail below on the basis of examples and with reference to theassociated figures.

Elements which are identical, of identical type or act identically areprovided with the same reference symbols in the figures. The figures andthe size relationships of the elements illustrated in the figures amongone another should not be regarded as to scale. Rather, individualelements may be illustrated with an exaggerated size to enable betterillustration and/or to afford a better understanding.

FIG. 1A shows a schematic plan view of a radiation-emittingsemiconductor device without the light-absorbing material. FIG. 1B showsthe associated sectional illustration along the dashed line depicted inFIG. 1A.

In this case, the radiation-emitting semiconductor device comprises ahousing body 10 formed with a plastic material or with a ceramicmaterial, for example. The housing body 10 is black in this case.

Electrical connection locations 11, via which radiation-emittingsemiconductor chips 1 a, 1 b, 1 c of the radiation-emittingsemiconductor device can be electrically contact-connected, projectlaterally from the housing body 10. The electrical connection locations11 are, for example, parts of an electrical leadframe exposed in thehousing body 10 at the chip mounting area 10 a thereof, where they formwire connection regions 2 and chip connection regions 3. The electricalconnection locations 11 can be formed with a metal such as copper,which, if appropriate, is coated with a further metal such as silver orgold, at least in selected locations.

Radiation-emitting semiconductor chips 1 a, 1 b, 1 c are applied to thechip connection regions 3. In this case, the radiation-emittingsemiconductor device comprises three different radiation-emittingsemiconductor chips. However, it is also possible for theradiation-emitting semiconductor device to comprise more or fewerradiation-emitting semiconductor chips. In this case, theradiation-emitting semiconductor device comprises one radiation-emittingsemiconductor chip 1 a which emits red light, one radiation-emittingsemiconductor chip 1 b which emits green light, and oneradiation-emitting semiconductor chip 1 c which emits blue light. Theradiation-emitting semiconductor chips 1 a, 1 b, 1 c are in each caseelectrically conductively connected to associated wire connectionregions 2 by a wire 12.

The radiation-emitting semiconductor chips are light-emitting diodechips, for example. Such a radiation-emitting semiconductor device canform, for example, a pixel of a display apparatus whose pixels areprovided by a multiplicity of radiation-emitting semiconductor devicesembodied in an identical fashion.

On account of their metallic reflectivity, the connection regions 2, 3have a higher reflectivity than the housing body 10, which is black, forexample. This can prove to be disturbing during the use of theradiation-emitting semiconductor device.

One example of a radiation-emitting semiconductor device is explained ingreater detail with reference to the schematic plan view in FIG. 2. Incontrast to the example described in conjunction with FIGS. 1A and 1B,the exposed locations of the wire connection regions 2 and the chipconnection regions 3 are covered with a light-absorbing material 4 (inthis respect, also cf. FIGS. 3A, 3B, 3C, 4A and 4B).

The light-absorbing material 4 preferably has the same color as, or asimilar color to, the chip mounting area 10 a of the housing body 10 orthe housing body 10. The light-absorbing material is a silicone, forexample, into which light-absorbing particles are introduced. By way ofexample, the light-absorbing particles are carbon black particles.

One possibility for introducing the light-absorbing material 4 isillustrated in greater detail in conjunction with the schematicsectional illustration in FIG. 3A. In this example, the light-absorbingmaterial 4 is applied in a targeted manner in the region of the wireconnection regions 2 and of the chip connection regions 3. The remainingchip mounting area 10 a that is at a distance from the connectionregions 2, 3 remains uncovered by the light-absorbing material 4. Inthis case, it is itself the same color as, or in a similar color to, thelight-absorbing material such that from some distance, for example, at adistance starting from 10 cm from the observer's eye, externally it canno longer be discerned that parts of the chip mounting area 10 a are notcovered with the light-absorbing material 4. In this case, thelight-absorbing material 4 is in direct contact with side areas of theradiation-emitting semiconductor chip 1 a. This can be implemented inthe same way for all the radiation-emitting semiconductor chips of thesemiconductor device.

That surface of the radiation-emitting semiconductor chips 1 a, 1 b, 1 cwhich is remote from the chip mounting area 10 a then remains free orsubstantially free of the light-absorbing material 4.

In the example in FIG. 3B, in addition to the light-absorbing material4, a transmissive potting material 5 is applied to the chip mountingarea 10 a, which potting material, is in direct contact with the chipmounting area 10 a in locations. The light-transmissive potting material5 is, for example, a potting material which contains silicone orconsists of silicone. The potting material is in direct contact withexposed outer areas of the light-absorbing material 4 in locations. Thelight-transmissive potting material is preferably free of, for example,the light-absorbing particles of the light-absorbing material 4.

In the example described in conjunction with FIG. 3C, the pottingmaterial 5 is curved convexly outwards at its top side remote from thechip mounting area 10 a and in this way forms a lens. In the exampleexplained in conjunction with FIG. 4A, the light-absorbing material 4completely covers the chip mounting area 10 a. It is thus possible forthe chip mounting area 10 a to be in a different color, for example,white, with respect to the light-absorbing material. However, thelight-absorbing material 4 is preferably the same color as the outerareas of the housing body 10 that are visible in plan view. The outerareas can be printed with a black color, for example.

As is evident in conjunction with FIG. 4B, the light-transmissivepotting material 5 in this case, too, can directly adjoin thelight-absorbing material 4 and the radiation-emitting semiconductor chipor chips 1 a, 1 b, 1 c and can be in direct contact with thesecomponents. A lens-like configuration of the top side of thelight-transmissive potting material 5 that is remote from the chipmounting area 10 a is also possible (see FIG. 4C).

A further example of a radiation-emitting semiconductor device isexplained in greater detail with reference to the schematic plan view inFIG. 5. In contrast to the example explained in conjunction with FIG. 2,the semiconductor device in this example comprises two wire connectionregions 2 for each of the radiation-emitting semiconductor chips 1 a, 1b, 1 c. That is to say that each of the radiation-emitting semiconductorchips 1 a, 1 b, 1 c comprises two top-side contact locations (notillustrated), via which it is electrically conductively connected ineach case to a wire connection region 2 by a wire 12. In this case, asdescribed, for example, in conjunction with FIGS. 3A, 3B, 3C, 4A, 4B and4C, the wire connection regions 2 are covered with the light-absorbingmaterial 4 at exposed locations.

In the case of the example described in conjunction with FIG. 5, theradiation-emitting semiconductor chips 1 a, 1 b, 1 c can comprise, inparticular, a carrier element or a growth substrate formed with anelectrically insulating material such as sapphire or SiC.

In the example in FIG. 5, the chip connection region 3 does not have tobe formed with a reflective material such as, for example, a metal. Inparticular, it is possible that covering of exposed locations of thechip connection regions 3 is not necessary in the example in FIG. 5. Inthis case, it is also possible for just the exposed locations of thewire connection regions 2 to be covered.

A further example of a radiation-emitting semiconductor device isexplained in greater detail in conjunction with FIG. 6. In contrast tothe example in FIG. 5, in this example only two of theradiation-emitting semiconductor chips 1 a, 1 b comprise two wireconnection regions 2, wherein the third radiation-emitting semiconductorchip 1 c is assigned a single wire connection region 2.

In other words, in this case, different types of radiation-emittingsemiconductor chips can also be used, wherein the chips can becontact-connected differently from one another. By way of example, atleast one of the radiation-emitting semiconductor chips can have arear-side and a front-side contact such as the radiation-emittingsemiconductor chip 1 c in FIG. 6, and at least one of theradiation-emitting semiconductor chips can have only front-side or onlyrear-side contacts such as, for example, the radiation-emittingsemiconductor chips 1 a, 1 b in FIG. 6.

A further example of a radiation-emitting semiconductor device isexplained in conjunction with FIG. 7. In this example, theradiation-emitting semiconductor device comprises a singleradiation-emitting semiconductor chip 1. By way of example, white lightis emitted by the radiation-emitting semiconductor device duringoperation.

The radiation-emitting semiconductor device thus comprises two chipconnection regions 3, which are in each case electrically conductivelyconnected to associated rear-side contact locations (not illustrated) ofthe semiconductor chip 1. Those locations of the chip connection regions3 which are not covered by the semiconductor chip 1 are covered with thelight-absorbing material 4, as is explained in greater detail, forexample, in one of FIGS. 3A, 3B, 3C, 4A, 4B and 4C. A radiation-emittingsemiconductor chip 1 having only rear-side contacts as shown in FIG. 7,can in this case also be used in radiation-emitting semiconductordevices comprising two or more radiation-emitting semiconductor chips.

Our devices are not restricted to the examples by the description on thebasis of those examples. Rather, this disclosure encompasses any novelfeature and also any combination of features, which in particularincludes any combination of features in the appended claims, even if thefeature or combination itself is not explicitly specified in the claimsor examples.

The invention claimed is:
 1. A radiation-emitting semiconductor devicecomprising: a housing body having a chip mounting area; a chipconnection region; a radiation-emitting semiconductor chip; and alight-absorbing material, wherein the radiation-emitting semiconductorchip is fixed to the chip connection region, the chip connection regionis covered with the light-absorbing material at first selected locationsat which said chip connection region is not covered by theradiation-emitting semiconductor chip, the radiation-emittingsemiconductor chip is free of the light-absorbing material in secondselected locations, the housing body has a cavity in which the at leastone radiation-emitting semiconductor chip is arranged, the chip mountingarea is a surface of the housing body which abuts the cavity, and thechip mounting area is free of the light-absorbing material at thirdselected locations remote from the chip connection region.
 2. The deviceaccording to claim 1, wherein a wire connection region is arranged atthe chip mounting area.
 3. The device according to claim 1, wherein thechip mounting area is formed with the same color as, or in a similarcolor to, the light absorbing material.
 4. The device according to claim1, further comprising a light-transmissive potting material, wherein thepotting material is substantially free of the light-absorbing material,and the potting material adjoins the radiation-emitting semiconductorchip and the light-absorbing material in the second selected locations.5. The device according to claim 4, wherein the potting material abutsthe chip mounting area in the second selected locations.
 6. The deviceaccording to claim 4, wherein the potting material is transparent. 7.The device according to claim 4, wherein the potting material is filledwith a phosphor and/or a diffuser.
 8. The device according to claim 1,wherein the housing body and the light-absorbing material are the samecolor.
 9. The device according to claim 2, wherein the chip connectionregion and the wire connection region are formed with a metal.
 10. Thedevice according to claim 9, wherein the light-absorbing materialinhibits migration and/or oxidation and/or corrosion of the metal. 11.The device according to claim 1, wherein the light-absorbing materialcomprises a silicone into which light-absorbing particles areintroduced.
 12. A display apparatus comprising at least one pixel formedat least partly by the device according to claim
 1. 13. A method ofproducing the device according to claim 1 comprising applying thelight-absorbing material by a jet process.
 14. A radiation-emittingsemiconductor device comprising: a housing body having a chip mountingarea; a wire connection region arranged at the chip mounting area; awire electrically conductively connecting the wire connection region tothe radiation-emitting semiconductor chip; a chip connection region; aradiation-emitting semiconductor chip; and a light-absorbing material,wherein the radiation-emitting semiconductor chip is fixed to the chipconnection region, the wire connection region is covered with thelight-absorbing material at the first selected locations at which it isnot covered by the wire, the chip connection region is covered with thelight-absorbing material at first selected locations at which said chipconnection region is not covered by the radiation-emitting semiconductorchip, the radiation-emitting semiconductor chip is free of thelight-absorbing material in second selected locations, the housing bodyhas a cavity in which the at least one radiation-emitting semiconductorchip is arranged, the chip mounting area is a surface of the housingbody which abuts the cavity, and the chip mounting area is free of thelight-absorbing material at third selected locations remote from thechip connection region.
 15. The device according to claim 1, wherein atleast 50% of the chip mounting area is free of the light-absorbingmaterial.
 16. The device according to claim 1, wherein thelight-absorbing material reflects or reemits at most 25% of light thatimpinges on an outer area of the light-absorbing material.